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Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current2 AMax
DC current gain25000200mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)2 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce25000 @ 200mA, 5V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-202 Long Tab
Supplier Device PackageTO-202
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 2mA, 1A

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