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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage300 V
Collector current500 mAMax
DC current gain4030mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)300 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA, 10V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-237AA
Supplier Device PackageTO-237
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA

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