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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage55 V
Collector current4 AMax
DC current gain25500mA
Power25 WMax
Power
Current - Collector Cutoff (Max)500µA
Current - Collector (Ic) (Max)4 A
Power - Max25 W
Voltage - Collector Emitter Breakdown (Max)55 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 500mA, 4V
Frequency - Transition3MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageBulk
Package / CaseDie
Supplier Device PackageDie
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic6V @ 1A, 3A

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