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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage40 V
Collector current800 mAMax
DC current gain40150mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)10nA (ICBO)
Current - Collector (Ic) (Max)800 mA
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition250MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)
PackageTape & Box (TB)
Package / CaseDie
Supplier Device PackageDie
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA

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