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Technical parameters

Key specs

TypePNP
Collector-emitter voltage120 V
Collector current30 AMax
DC current gain20030A
Power
Current - Collector Cutoff (Max)1mA
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)120 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30A, 5V
Frequency - Transition-
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseDie
Supplier Device PackageDie
Other
Base Product NumberCP647
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A

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