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Technical parameters

Key specs

TypePNP
Collector-emitter voltage450 V
Collector current500 mAMax
DC current gain5010mA
Power350 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max350 mW
Voltage - Collector Emitter Breakdown (Max)450 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 10V
Frequency - Transition20MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
PackageTray
Package / CaseDie
Supplier Device PackageDie
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA

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