沟道P 沟道
耐压30 V
连续漏极电流2.4 A
导通电阻91 mΩ
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沟道P 沟道
耐压30 V
连续漏极电流2.4 A
导通电阻91 mΩ最大 · 1.2A
阈值电压1.4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | - |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tray |
| Package / Case | Die |
| Supplier Device Package | Die |
| 其他 | |
| Base Product Number | CP798 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
| Mfr | Central Semiconductor Corp |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.2A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
技术资料
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