Texas InstrumentsUnited States
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage25 V
Continuous drain current21 ~ 100 A
On-resistance4.7 mΩMax · 20A
Gate threshold voltage1.1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8V |
| Power Dissipation (Max) | 3W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-VSON (5x6) |
| Other | |
| Base Product Number | CSD16342 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 12.5 V |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 8V |
| Series | NexFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |