Texas InstrumentsUnited States
MOSFET N-CH 60V 200A/349A DDPAK
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Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current200 ~ 349 A
On-resistance1.6 mΩMax · 100A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta), 349A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA |
| Supplier Device Package | TO-263 (DDPAK-3) |
| Other | |
| Base Product Number | CSD18536 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11430 pF @ 30 V |
| Mfr | Texas Instruments |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| Series | NexFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
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