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SIC 6N-CH 1200V 450A MODULE
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 450A |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Package | Tray |
| Package / Case | Module |
| Supplier Device Package | Module |
| Other | |
| Base Product Number | CXT-PLA3 |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 295nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 30000pF @ 600V |
| Mfr | CISSOID |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 300A |
| Series | - |
| Technology | Silicon Carbide (SiC) |
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