Diotec SemiconductorGermany
MOSFET, PowerQFN 3x3, 65V, 65A,
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage65 V
Continuous drain current65 A
On-resistance5 mΩMax · 20A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drain to Source Voltage (Vdss) | 65 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 39W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-QFN (3x3) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1617 pF @ 30 V |
| Mfr | Diotec Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |