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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage40 V
Continuous drain current70 A
On-resistance6.5 mΩMax · 20A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)46W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-QFN (5x6)
Other
Base Product NumberDI070P04
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7560 pF @ 20 V
MfrDiotec Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs6.5mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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