Diotec SemiconductorGermany
MOSFET, D2PAK, 100V, 200A, 175C
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current200 A
On-resistance2.3 mΩMax · 120A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 340W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | - |
| Supplier Device Package | TO-263AB |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 262 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16800 pF @ 50 V |
| Mfr | Diotec Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 120A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |