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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current5.3 A
On-resistance50 mΩMax · 5.3A
Gate threshold voltage1.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drain to Source Voltage (Vdss)30 V
Environment and package
Mounting TypeSurface Mount
PackageCut Tape (CT)
Package / Case8-TSOP (0.130", 3.30mm Width)
Supplier Device Package8-SO
Other
Base Product NumberDI9435
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 15 V
MfrDiodes Incorporated
Product StatusObsolete
Rds On (Max) @ Id, Vgs50mOhm @ 5.3A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA

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