Diodes IncorporatedUnited States
MOSFET N/P-CH 30V 3.4A TSOT23-6
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 2.7A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 880mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSOT-23-6 |
| Other | |
| Base Product Number | DMC3061 |
| Configuration | N and P-Channel Complementary |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V, 6.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 278pF @ 15V, 287pF @ 15V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA, 2.2V @ 250µA |
Documents
No documents are linked to this part yet.