Diodes IncorporatedUnited States
MOSFET N/P-CH 60V 3.1A 8VDFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Power - Max | 1.4W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-VDFN |
| Supplier Device Package | V-DFN3030-8 |
| Other | |
| Base Product Number | DMC6070 |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 731pF @ 20V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
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