Diodes IncorporatedUnited States
MOSFET 4N-CH 100V 6A 12VDFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drain to Source Voltage (Vdss) | 100V |
| Power - Max | 900mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 12-PowerVDFN |
| Supplier Device Package | V-DFN5045-12 (Type C) |
| Other | |
| Base Product Number | DMHT10 |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 11.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 683pF @ 50V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |