DMJ70H600SH3

DMJ70H600SH3

停产单 FET,MOSFETTO-251

MOSFET N-CH 700V 11A TO251

沟道N 沟道
耐压700 V
连续漏极电流11 A
导通电阻600 mΩ

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技术参数

沟道N 沟道
耐压700 V
连续漏极电流11 A
导通电阻600 mΩ最大 · 2.4A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)113W (Tc)
环境与封装
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
QualificationAEC-Q101
Supplier Device PackageTO-251
其他
Base Product NumberDMJ70
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds643 pF @ 25 V
MfrDiodes Incorporated
Product StatusObsolete
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料