DMN1019USN-13

在产单 FET,MOSFETTO-236-3

MOSFET N-CH 12V 9.3A SC59

沟道N 沟道
耐压12 V
连续漏极电流9.3 A
导通电阻10 mΩ

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技术参数

沟道N 沟道
耐压12 V
连续漏极电流9.3 A
导通电阻10 mΩ最大 · 9.7A
阈值电压800 mV最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C9.3A (Ta)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 2.5V
Power Dissipation (Max)680mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59-3
其他
Base Product NumberDMN1019
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds2426 pF @ 10 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs10mOhm @ 9.7A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id800mV @ 250µA

技术资料