Diodes IncorporatedUnited States
MOSFET N-CH 20V 440MA 3DFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current440 mA
On-resistance1.5 ΩMax · 10mA
Gate threshold voltage1.2 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 440mA (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Power Dissipation (Max) | 450mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 3-UFDFN |
| Supplier Device Package | X1-DFN1006-3 |
| Other | |
| Base Product Number | DMN2005 |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 10mA, 4V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |