Diodes IncorporatedUnited States
MOSFET 2N-CH 20V 12.2A 4VDFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 2.1W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 4-VFDFN Exposed Pad |
| Supplier Device Package | V-DFN2050-4 |
| Other | |
| Base Product Number | DMN2011 |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2248pF @ 10V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
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