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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C520mA (Ta)
Drain to Source Voltage (Vdss)20V
Power - Max400mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseSOT-963
Supplier Device PackageSOT-963
Other
Base Product NumberDMN2991
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs0.35C @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds21.5pF @ 15V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs990mOhm @ 100mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

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