DMN3010LFG-7

DMN3010LFG-7

在产单 FET,MOSFET

MOSFET N-CH 30V 11A PWRDI3333

沟道N 沟道
耐压30 V
连续漏极电流11 ~ 30 A
导通电阻8.5 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流11 ~ 30 A
导通电阻8.5 mΩ最大 · 18A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C11A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)900mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePOWERDI3333-8
其他
Base Product NumberDMN3010
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2075 pF @ 15 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs8.5mOhm @ 18A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料