Diodes IncorporatedUnited States
MOSFET 2N-CH 5.5A 8VDFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | V-DFN3020-8 |
| Other | |
| Base Product Number | DMN3035 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 399pF @ 15V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |