DMN3061SVT-7

在产FET,MOSFET 阵列

MOSFET 2N-CH 30V 3.4A TSOT23-6

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max1.08W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-23-6
其他
Base Product NumberDMN3061
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds278pF @ 15V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs-
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-

技术资料

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