DMN3069L-7

在产单 FET,MOSFETSOT-23-3

MOSFET BVDSS: 25V~30V SOT23 T&R

沟道N 沟道
耐压30 V
连续漏极电流5.3 A
导通电阻30 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流5.3 A
导通电阻30 mΩ最大 · 4A
阈值电压1.8 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)800mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
其他
Base Product NumberDMN3069
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds309 pF @ 15 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs30mOhm @ 4A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.8V @ 250µA

技术资料