Diodes IncorporatedUnited States
MOSFET N-CH 30V 3.2A 3DFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current3.2 A
On-resistance69 mΩMax · 500mA
Gate threshold voltage1.1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Power Dissipation (Max) | 1.38W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Supplier Device Package | X2-DFN1006-3 |
| Other | |
| Base Product Number | DMN3110 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.52 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 15 V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 500mA, 8V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
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