All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current270 mA
On-resistance2 ΩMax · 10mA
Gate threshold voltage1.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C270mA (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)280mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-523
Supplier Device PackageSOT-523
Other
Base Product NumberDMN313
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds36.3 pF @ 5 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs2Ohm @ 10mA, 4V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.5V @ 250µA

Documents

No documents are linked to this part yet.