DMN6066SSS-13

DMN6066SSS-13

在产单 FET,MOSFET8-SOIC

MOSFET N-CH 60V 3.7A 8SO

沟道N 沟道
耐压60 V
连续漏极电流3.7 A
导通电阻66 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流3.7 A
导通电阻66 mΩ最大 · 4.5A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.56W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
其他
Base Product NumberDMN6066
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds502 pF @ 30 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs66mOhm @ 4.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料