DMN60H080DS-7

在产单 FET,MOSFETSOT-23-3

MOSFET N-CH 600V 80MA SOT23-3

沟道N 沟道
耐压600 V
连续漏极电流80 mA
导通电阻100 Ω

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压600 V
连续漏极电流80 mA
导通电阻100 Ω最大 · 60mA
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C80mA (Ta)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.1W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
其他
Base Product NumberDMN60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds25 pF @ 25 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs100Ohm @ 60mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料