Diodes IncorporatedUnited States
MOSFET N-CH 60V 0.32A SOT523
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current320 mA
On-resistance2 ΩMax · 50mA
Gate threshold voltage1 VMax · 250A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V, 4.5V |
| Power Dissipation (Max) | 230mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | SOT-523 |
| Supplier Device Package | SOT-523 |
| Other | |
| Base Product Number | DMN62 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF @ 30 V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250A |
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