DMN65D8LDW-7

DMN65D8LDW-7

在产FET,MOSFET 阵列

MOSFET 2N-CH 60V 0.18A SOT363

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C180mA
Drain to Source Voltage (Vdss)60V
Power - Max300mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363
其他
Base Product NumberDMN65
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds22pF @ 25V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs6Ohm @ 115mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

器件图片

技术资料