Diodes IncorporatedUnited States
MOSFET P-CH 20V 60A PWRDI5060-8
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current60 A
On-resistance1.9 mΩMax · 25A
Gate threshold voltage1.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Power Dissipation (Max) | 2.3W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PowerDI5060-8 (Type K) |
| Other | |
| Base Product Number | DMP2002 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 585 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12826 pF @ 10 V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |