PowerDI3333-8 Top View

DMP2006UFG-7

ObsoleteSingle FETs, MOSFETsPowerDI3333-8

MOSFET P-CH 20V 17.5A POWERDI

20V P-channel enhancement mode MOSFET in PowerDI3333-8 package, low RDS(ON), AEC-Q101 qualified, lead-free and halogen-free.Checked against the datasheet

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Technical parameters

Key specs

ChannelP-channel

Drain-source voltage-20 VMin: -20 V (VGS=0V，ID=-250μA)

Continuous drain current-40 AMax: -40 A (TC=+25°C)

On-resistance5.5 mΩMax · Max: 5.5 mΩ (VGS=-4.5V，ID=-15A)

Gate threshold voltage-1 VMax · Max: -1.0 V (VDS=VGS，ID=-250μA)

Datasheet-verified parameters

26 items

Parameter	Value and test conditions	Source
Channel	P-CHANNEL
Drain-Source Breakdown Voltage	Min: -20 V (VGS=0V, ID=-250μA)
Continuous Drain Current	Max: -40 A (TC=+25°C)
Static Drain-Source On-Resistance	Typ: 4.2 mΩ, Max: 5.5 mΩ (VGS=-4.5V, ID=-15A)
Gate Threshold Voltage	Min: -0.4 V, Max: -1.0 V (VDS=VGS, ID=-250μA)
Package	PowerDI3333-8
Operating Temperature	TA = +25°C (unless otherwise specified)
Grade	AEC-Q101
RoHS	Fully RoHS Compliant
Halogen Free	Halogen and Antimony Free
Zero Gate Voltage Drain Current	Max: -1 μA (VDS=-16V, VGS=0V)
Gate-Source Leakage	Max: ±100 nA (VGS=±8V, VDS=0V)
Diode Forward Voltage	Typ: -0.7 V, Max: -1.2 V (VGS=0V, IS=-10A)
Input Capacitance	Typ: 5404 pF, Max: 7500 pF (VDS=-10V, VGS=0V, f=1.0MHz)
Output Capacitance	Typ: 728 pF, Max: 1000 pF (VDS=-10V, VGS=0V, f=1.0MHz)
Reverse Transfer Capacitance	Typ: 612 pF, Max: 900 pF (VDS=-10V, VGS=0V, f=1.0MHz)
Gate Resistance	Typ: 3.8 Ω, Max: 8 Ω (VDS=0V, VGS=0V, f=1.0MHz)
Total Gate Charge	Typ: 64 nC, Max: 100 nC (VGS=-4.5V, VDD=-10V, ID=-20A)
Turn-On Delay Time	Typ: 9.1 ns, Max: 20 ns (VGS=-4.5V, VDD=-10V, RG=1Ω, ID=-10A)
Turn-On Rise Time	Typ: 19 ns, Max: 35 ns (VGS=-4.5V, VDD=-10V, RG=1Ω, ID=-10A)
Turn-Off Delay Time	Typ: 146 ns, Max: 220 ns (VGS=-4.5V, VDD=-10V, RG=1Ω, ID=-10A)
Turn-Off Fall Time	Typ: 104 ns, Max: 150 ns (VGS=-4.5V, VDD=-10V, RG=1Ω, ID=-10A)
Reverse Recovery Time	Typ: 61 ns, Max: 100 ns (IF=-10A, di/dt=100A/μs)
Reverse Recovery Charge	Typ: 44 nC, Max: 70 nC (IF=-10A, di/dt=100A/μs)
Case Material	Molded Plastic, 'Green' Molding Compound; UL Flammability Classification Rating 94V-0
Terminals Finish	Matte Tin Annealed over Copper Leadframe

All parameters (21)ExpandCollapse

Power
Current - Continuous Drain (Id) @ 25°C	17.5A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Power Dissipation (Max)	2.3W (Ta)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Supplier Device Package	POWERDI3333-8
Other
Base Product Number	DMP2006
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5404 pF @ 10 V
Mfr	Diodes Incorporated
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	5.2mOhm @ 15A, 4.5V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1V @ 250µA

Pinout and package

Bottom View — Package: **PowerDI3333-8**

Pin	Name	Function	Source
1		Source (S)
2		Source (S)
3		Source (S)
4		Source (S)
5		Gate (G)
6		Drain (D)
7		Drain (D)
8		Drain (D)

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