Diodes IncorporatedUnited States
MOSFET BVDSS: 8V~24V U-DFN1616-6
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current8 A
On-resistance28 mΩMax · 2A
Gate threshold voltage1.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | 6-PowerUFDFN |
| Supplier Device Package | U-DFN1616-6 (Type K) |
| Other | |
| Base Product Number | DMP2037 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 806 pF @ 10 V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 2A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
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