Diodes IncorporatedUnited States
MOSFET BVDSS: 25V-30V TSOT26
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current2.7 A
On-resistance95 mΩMax · 2.7A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Power Dissipation (Max) | 800mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | TSOT-26 |
| Other | |
| Base Product Number | DMP3165 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 287 pF @ 15 V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2.7A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Documents
No documents are linked to this part yet.