DMP6185SE-13
Diodes IncorporatedUnited States

DMP6185SE-13

ActiveSingle FETs, MOSFETsSOT223

MOSFET P-CH 60V 3A SOT223

60V P-channel enhancement mode MOSFET in SOT223 package, low on-resistance, suitable for power management and motor control.Checked against the datasheet

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage-60 VVGS=0V，ID=-250μA
Continuous drain current-3 AVGS=-10V，VGS=-4.5V
On-resistance150 mΩMax · VGS=-10V，ID=-2.2A，VGS=-4.5V，ID=-1.8A
Gate threshold voltage-3 VMax · VDS=VGS，ID=-250μA

Datasheet-verified parameters

24 items
ParameterValue and test conditionsSource
ChannelP-CHANNEL
Drain-Source Breakdown VoltageMin: -60V, VGS=0V, ID=-250μA
Continuous Drain CurrentTyp: -3A @ VGS=-10V, +25°C; Typ: -2.7A @ VGS=-4.5V, +25°C
Static Drain-Source On-ResistanceTyp: 110mΩ, Max: 150mΩ @ VGS=-10V, ID=-2.2A; Typ: 130mΩ, Max: 185mΩ @ VGS=-4.5V, ID=-1.8A
Gate Threshold VoltageMin: -1V, Max: -3V @ VDS=VGS, ID=-250μA
PackageSOT223
RoHSCompliant
Halogen FreeHalogen and Antimony Free. “Green” Device
Zero Gate Voltage Drain CurrentMax: -1μA @ VDS=-48V, VGS=0V
Gate-Source LeakageMax: ±100nA @ VGS=±20V, VDS=0V
Diode Forward VoltageTyp: -0.75V, Max: -0.95V @ VGS=0V, IS=-1A
Input CapacitanceTyp: 708pF @ VDS=-30V, VGS=0V, f=1MHz
Output CapacitanceTyp: 39pF @ VDS=-30V, VGS=0V, f=1MHz
Reverse Transfer CapacitanceTyp: 32pF @ VDS=-30V, VGS=0V, f=1MHz
Gate ResistanceTyp: 17Ω, Max: 28Ω @ VDS=0V, VGS=0V, f=1MHz
Total Gate ChargeTyp: 6.2nC @ VGS=-4.5V, VDS=-30V, ID=-12A; Typ: 14nC @ VGS=-10V, VDS=-30V, ID=-12A
Turn-On Delay TimeTyp: 5.2ns @ VDS=-30V, RL=2.5Ω, VGS=-10V, RG=3Ω
Turn-On Rise TimeTyp: 23ns @ VDS=-30V, RL=2.5Ω, VGS=-10V, RG=3Ω
Turn-Off Delay TimeTyp: 33ns @ VDS=-30V, RL=2.5Ω, VGS=-10V, RG=3Ω
Turn-Off Fall TimeTyp: 39ns @ VDS=-30V, RL=2.5Ω, VGS=-10V, RG=3Ω
Body Diode Reverse Recovery TimeTyp: 22ns @ IF=-12A, di/dt=100A/μs
Body Diode Reverse Recovery ChargeTyp: 17nC @ IF=-12A, di/dt=100A/μs
Case MaterialMolded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
Terminals FinishMatte Tin Annealed over Copper Lead Frame
All parameters (23)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)1.2W (Ta)
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-261-4, TO-261AA
QualificationAEC-Q101
Supplier Device PackageSOT-223-3
Other
Base Product NumberDMP6185
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds708 pF @ 30 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs150mOhm @ 2.2A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Pinout and package

Pin Out - Top View
Pin Out - Top View
Package: SOT223
PinNameFunctionSource
1Drain
2Source
3Drain
4Gate

Documents

DatasheetDatasheet · 519.7 KB · 2026-10-28
Open document center

Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.