DMTH10H015LK3-13

在产单 FET,MOSFETTO-252-3

MOSFET N-CH 100V 52.5A TO252

沟道N 沟道
耐压100 V
连续漏极电流52.5 A
导通电阻15 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流52.5 A
导通电阻15 mΩ最大 · 20A
阈值电压3.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C52.5A (Ta)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.1W (Ta)
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
QualificationAEC-Q101
Supplier Device PackageTO-252-3
其他
Base Product NumberDMTH10
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

技术资料