Diodes IncorporatedUnited States
MOSFET 2N-CH 40V 11.1A PWRDI50
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta), 42A (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Power - Max | 2.6W (Ta) |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Qualification | AEC-Q101 |
| Supplier Device Package | PowerDI5060-8 |
| Other | |
| Base Product Number | DMTH4011 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 805pF @ 20V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
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