All alternatives

View full report

Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current100 mAMax
DC current gain1202mA
Power450 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max450 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Frequency - Transition80MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageX2-DFN1006-3
Other
Base Product NumberDP0150
MfrDiodes Incorporated
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA

Documents