Diodes IncorporatedUnited States
SS LOW SAT TRANSISTOR U-DFN2020-
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage60 V
Collector current6 AMax
DC current gain280500mA
Power690 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA |
| Current - Collector (Ic) (Max) | 6 A |
| Power - Max | 690 mW |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V |
| Frequency - Transition | 115MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 3-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-3 (Type B) |
| Other | |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 315mV @ 300mA, 6A |
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