All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current9.5 A
On-resistance14.5 mΩMax · 5A
Gate threshold voltage1.3 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C9.5A (Ta)
Drain to Source Voltage (Vdss)20 V
Power Dissipation (Max)1.6W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C
PackageBulk
Package / Case8-SMD, Flat Lead
Supplier Device PackageSOT-28FL/ECH8
Other
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 10 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs14.5mOhm @ 5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.3V @ 1mA

Documents