EM6M1T2R

MOSFET N/P-CH 30V/20V EMT6

All alternatives

Power
Current - Continuous Drain (Id) @ 25°C	100mA, 200mA
Drain to Source Voltage (Vdss)	30V, 20V
Power - Max	150mW
Environment and package
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case	SOT-563, SOT-666
Supplier Device Package	EMT6
Other
Base Product Number	EM6M1
Configuration	N and P-Channel
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	13pF @ 5V
Mfr	Rohm Semiconductor
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	8Ohm @ 10mA, 4V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	-

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