EMD30T2R

EMD30T2R

不推荐用于新设计双极晶体管阵列,预偏置

TRANS NPN/PNP PREBIAS 0.15W EMT6

查看国产替代问 AI FAE

全部替代型号

查看完整报告

技术参数

电源
Current - Collector Cutoff (Max)500nA
Current - Collector (Ic) (Max)200mA
Power - Max150mW
Voltage - Collector Emitter Breakdown (Max)50V, 30V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition260MHz
环境与封装
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
其他
Base Product NumberEMD30
MfrRohm Semiconductor
Product StatusNot For New Designs
Resistor - Base (R1)10kOhms, 1kOhms
Resistor - Emitter Base (R2)10kOhms
Series-
Transistor Type1 PNP Pre-Biased, 1 NPN
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA

器件图片

技术资料

该型号暂未收录资料。