Rohm SemiconductorJapan
TRANS DIGITAL BJT NPN/PNP 50V 10
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA, 150mA |
| Power - Max | 150mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 180 @ 1mA, 6V |
| Frequency - Transition | 250MHz, 140MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
| Other | |
| Base Product Number | EMF18 |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Series | - |
| Transistor Type | 1 NPN - Pre-Biased, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
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