Rohm SemiconductorJapan
TRANS DIGITAL BJT NPN 12V 500MA/
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Power - Max | 150mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz, 320MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
| Other | |
| Base Product Number | EMF7 |
| Mfr | Rohm Semiconductor |
| Product Status | Active |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Series | - |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Documents
No documents are linked to this part yet.