EPCUnited States
GANFET N-CH 30V 60A DIE
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current60 A
On-resistance1.3 mΩMax · 40A
Gate threshold voltage2.5 VMax · 20mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| Base Product Number | EPC20 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
| Mfr | EPC |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 40A, 5V |
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 20mA |