EPC2100
EPC美国

EPC2100

在产FET,MOSFET 阵列

GANFET 2N-CH 30V 10A/40A DIE

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C10A (Ta), 40A (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max-
环境与封装
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseDie
Supplier Device PackageDie
其他
Base Product NumberEPC210
Configuration2 N-Channel (Half Bridge)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 15V, 1960pF @ 15V
MfrEPC
Product StatusActive
Rds On (Max) @ Id, Vgs8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 4mA, 2.5V @ 16mA

器件图片

技术资料

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