EPC2105
EPC美国

EPC2105

在产FET,MOSFET 阵列

GANFET 2N-CH 80V 9.5A/38A DIE

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Drain to Source Voltage (Vdss)80V
Power - Max-
环境与封装
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseDie
Supplier Device PackageDie
其他
Base Product NumberEPC210
Configuration2 N-Channel (Half Bridge)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V, 1100pF @ 40V
MfrEPC
Product StatusActive
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
SerieseGaN®
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 2.5mA, 2.5V @ 10mA

器件图片

技术资料