EPCUnited States
GANFET 3 N-CH 100V 9BGA
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Drain to Source Voltage (Vdss) | 100V |
| Power - Max | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 9-VFBGA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
| Other | |
| Base Product Number | EPC210 |
| Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
| Mfr | EPC |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |